The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Nov. 06, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jianquan Jia, Wuhan, CN;

Ying Cui, Wuhan, CN;

Kaikai You, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01); G11C 11/4099 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/4074 (2013.01); G11C 11/4094 (2013.01); G11C 11/4099 (2013.01); G11C 11/419 (2013.01);
Abstract

A non-volatile memory device includes a memory string, a select gate line coupled to the memory string, word lines coupled to the memory string and including a selected word line, and a control circuit coupled to the select gate line and the word lines, and configured to apply word line pre-pulse signals to at least two groups of the word lines disposed between the select gate line and the selected word line during a pre-charge period. The at least two groups of the word lines include a first group and a second group disposed between the first group and the select gate line. A voltage level of a second word line pre-pulse signal applied to the second group is greater than a voltage level of a first word line pre-pulse signal applied to the first group. A voltage level of at least one word line pre-pulse signal of the word line pre-pulse signals is greater than 0.


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