The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
May. 12, 2021
Tekscend Photomask Corp., Tokyo, JP;
TEKSCEND PHOTOMASK CORP., Tokyo, JP;
Abstract
There are provided a reflective mask blank in which a fine absorption film pattern is formed even when a high-absorbent material is used as an absorption film of an EUV mask, whereby the shadowing effect can be reduced and electron beam repair etching can be performed and a reflective mask blank for producing the same. A reflective mask blank () according to this embodiment includes: a substrate (); a multi-layer reflective film () reflecting an EUV light having a multi-layer structure formed on the substrate (); a capping layer () protecting the multi-layer reflective film () formed on the multi-layer reflective film (); and an absorption film () absorbing the EUV light formed on the capping layer (), in which the absorption film () contains 50% by atom or more of elements constituting at least one of tin oxide (SnO) and indium oxide (InO) and contains a material easy to be etched by a fluorine-based gas or a chlorine-based gas.