The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 15, 2022
Hamamatsu Photonics K.k., Hamamatsu, JP;
Masataka Ikesu, Hamamatsu, JP;
Tomonori Nakamura, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A semiconductor failure analysis device includes a first analysis unit that emits first irradiation light along a first path set on a first main surface of a semiconductor device, a second analysis unit that emits second irradiation light along a second path set on a second main surface that is a back side of the first main surface, an electric signal acquisition unit that receives an electric signal output from the semiconductor device irradiated with the first irradiation light and the second irradiation light, and a computer that controls the second analysis unit. A size of a first irradiation region is different from a size of a second irradiation region. The computer emits the first irradiation light and the second irradiation light while a state where the entire second irradiation region overlaps the first irradiation region is maintained.