The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Oct. 31, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yasuhiro Hidaka, Kanagawa, JP;
Ingi Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
In semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. In a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. Further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. When the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. The first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. An amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.