The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 30, 2023
Globalwafers Co., Ltd., Hsinchu, TW;
Ching-Shan Lin, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A crystal growing method for crystals include the following steps. A first crystal seed is provided, the first crystal seed has a first monocrystalline proportion and a first size. N times of crystal growth processes are performed on the first crystal seed, wherein each of the crystal growth process will increase the monocrystalline proportion, and the N times of crystal growth processes are performed until a second crystal having a monocrystalline proportion of 100% is reached, and wherein the N times includes more than 3 times of crystal growth processes. Each crystal growth process includes adjusting a ratio difference (ΔTz/ΔTx) between an axial temperature gradient (ΔTz) and a radial temperature gradient (ΔTx) of the crystal, so as to control the ratio difference within a range of 0.5 to 3 for forming the second crystal.