The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 31, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Fa-Shen Jiang, Taoyuan, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/245 (2023.02); G11C 13/0011 (2013.01); H10N 70/063 (2023.02); H10N 70/8265 (2023.02); H10N 70/841 (2023.02); H10N 70/8613 (2023.02);
Abstract
Some embodiments relate to an integrated chip including a first conductive structure over a substrate. A first dielectric layer is on the first conductive structure. A second dielectric layer is on the first dielectric layer, where thermal conductivities of the first and second dielectric layers are different from one another. A second conductive structure is over the second dielectric layer.