The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jun. 14, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Ming Hung, Hsinchu, TW;

I-Hsuan Chiu, Hsinchu, TW;

Hsiang-Fu Chen, Hsinchu, TW;

Kang-Yi Lien, Hsinchu, TW;

Chu-Heng Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/00 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 1/045 (2025.01); H10D 1/025 (2025.01); H10D 64/035 (2025.01);
Abstract

A semiconductor device includes a first substrate having opposite first and second sides, a first conductive layer on the first side of the first substrate, and a second substrate having opposite first and second sides. The second side of the second substrate is bonded to the first side of the first substrate. The second substrate includes a semiconductor material, and at least one circuit element electrically coupled to the first conductive layer. The at least one circuit element includes at least one of a Schottky diode configured by the semiconductor material and a first contact structure, a capacitor having a first electrode of the semiconductor material, or a resistor of the semiconductor material.


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