The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Feb. 02, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Kang You, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a semiconductor structure includes: providing a substrate, the substrate including a first isolation groove extending in a first direction and a plurality of active columns arranged in an array along the first direction and a third direction, the substrate being divided into a first area and a second area by the first isolation groove along a second direction, the active columns being supported through support structures; forming semi-capacitor structures located in the first area and gate-all-around structures located in the second area in gaps between the active columns; processing the active columns and the semi-capacitor structures in the first area to form capacitor structures extending in the second direction; and forming first connecting structures connecting the gate-all-around structures and the capacitor structures in the first isolation groove.