The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jan. 17, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Zhiyuan Lu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G11C 5/06 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); G11C 5/06 (2013.01); H10B 12/0335 (2023.02); H10B 12/33 (2023.02);
Abstract

Embodiments provide a semiconductor structure and a fabricating method. The structure includes: a substrate including a capacitor structure and a peripheral device structure; a first wiring layer including a first wiring sub-layer and a second wiring sub-layer, a first conductive plug including a first conductive sub-plug and a second conductive sub-plug, where the first wiring sub-layer is positioned above the peripheral device structure, a terminal of the first conductive sub-plug is electrically connected to the first wiring sub-layer, other terminal of the first conductive sub-plug is electrically connected to the peripheral device structure, the second wiring sub-layer is positioned above the first wiring sub-layer, a terminal of the second conductive sub-plug is electrically connected to the second wiring sub-layer, and other terminal of the second conductive sub-plug is electrically connected to the first wiring sub-layer or the peripheral device structure; and a second wiring layer positioned above the capacitor structure.


Find Patent Forward Citations

Quick Actions:

Lu, Zhiyuan. (2025). Semiconductor structure and method for fabricating same (U.S. Patent No. 12506073). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12506073

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