The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jan. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Bo-Feng Young, Hsinchu, TW;

Han-Jong Chia, Hsinchu, TW;

Sai-Hooi Yeong, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, first and second stack units disposed over the semiconductor substrate, and a feature disposed between the first and second stack units. Each of the first and second stack units includes at least one stack that includes a conductive film and a dielectric film stacked on each other. The feature includes a plurality of repeating units and a plurality of separators disposed to alternate with the repeating units. Each of the repeating units includes an inner portion including a pair of conductive pillars, and an outer portion including a memory film and a channel film. A method for manufacturing the semiconductor device is also disclosed.


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