The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jul. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Chen, Taichung, TW;

Chin-Shyh Wang, Hsinchu, TW;

Chao-Wen Shih, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/76224 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 2221/1057 (2013.01); H01L 2221/1068 (2013.01);
Abstract

A method includes etching a substrate to form an opening, depositing a first dielectric liner extending into the opening, and depositing a second dielectric liner over the first dielectric liner. The second dielectric liner extends into the opening. A conductive material is filled into the opening. The method further includes performing a first planarization process to planarize the conductive material so that a portion of the conductive material in the opening forms a through-via, performing a backside grinding process on the substrate until the through-via is revealed from a backside of the substrate, and forming a conductive feature on the backside of the substrate. The conductive feature is electrically connected to the through-via.


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