The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jan. 19, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Songmei Shen, Hefei, CN;
Junyi Zhang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a semiconductor structure includes the following operations. A support layer and a first dielectric layer that are stacked are formed on the substrate, in which first trenches are formed in the support layer and the first dielectric layer. A first blocking layer covering sidewalls and bottoms of the first trenches and a top surface of the first dielectric layer is formed. The first blocking layer and the first dielectric layer are etched to form etching holes. The first dielectric layer exposed by the etching holes is removed to form cavities. A second blocking layer is formed, which seals the etching holes at the tops of the cavity. Part of the first blocking layer in the first trenches is removed so that the first trenches expose the substrate. Wires are formed in the first trenches.