The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Mar. 05, 2024
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Hidehiro Yanai, Toyama, JP;

Shin Hiyama, Toyama, JP;

Toru Kakuda, Toyama, JP;

Toshiya Shimada, Toyama, JP;

Tomihiro Amano, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); G03F 7/42 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32458 (2013.01); G03F 7/427 (2013.01); H01J 37/321 (2013.01); H01J 37/32449 (2013.01); H01J 37/32633 (2013.01); H01L 21/31138 (2013.01);
Abstract

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel; a gas introduction port installed at an upper end of the reaction vessel; an electrode installed along an outer circumference of the reaction vessel; a baffle installed between the upper end of the reaction vessel and an upper end of the electrode with a gap between an outer circumference of the baffle and an inner circumference of the reaction vessel along the outer circumference of the baffle; a fixing part attached to an inner plane of the baffle and disposed inside the outer circumference of the baffle so as to fix the baffle to the upper end of the reaction vessel; and a gas exhaust pipe connected to the reaction vessel.


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