The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jan. 29, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4093 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 11/4076 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G11C 5/147 (2013.01); G11C 7/1069 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/50004 (2013.01); G11C 11/4076 (2013.01); G11C 29/12005 (2013.01); G11C 2029/5004 (2013.01);
Abstract
Systems and methods described herein may increase voltages sensed during testing of a device-under-test, which may increase an ease of sensing by a comparator, where a relatively less sensitive comparator may be used to detect the increased voltage sensed. Indeed, readout circuitry may include two or more diodes coupled in series to a resistor, which may help increase the voltages sensed via the readout circuitry.
Huang, Zhi. (2025). Multiple diode reference readout circuitry of a degradation sensing circuit (U.S. Patent No. 12505874). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12505874
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile