The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jan. 08, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Gianluca Nicosia, Boise, ID (US);

Akira Goda, Tokyo, JP;

Niccolo Righetti, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01);
Abstract

A memory sub-system with a memory device having a plurality of cells, and the plurality of cells having a set of cells, and a processing device operatively coupled to the memory device, the processing device to perform operations of determining a level information associated with the set of cells, where the set of cells comprise a target cell associated with a read operation, identifying a read level offset for the target cell based on the level information, and performing the read operation in accordance with the read level offset.


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Nicosia, Gianluca. (2025). Self-optimizing corrective read offsets with lateral charge migration proxies (U.S. Patent No. 12504886). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12504886

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