The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Apr. 12, 2023
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Chieh Hu, Chiayi, TW;
Chun-Chin Tu, Zhubei, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/45591 (2013.01); C23C 16/4585 (2013.01); C30B 25/12 (2013.01); C23C 16/45563 (2013.01); C23C 16/4588 (2013.01); C30B 25/10 (2013.01);
Abstract
A method of manufacturing a semiconductor wafer in a reaction apparatus comprising channeling a process gas into a reaction chamber through the process gas inlet and heating the process gas with the preheat ring having an edge bar. The method also includes adjusting at least one of a velocity and a direction of the process gas with the edge bar, and depositing a layer on the semiconductor wafer with the process gas, wherein the edge bar facilitates forming a uniform thickness of the layer on the semiconductor wafer.