The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Nov. 22, 2024
Applicant:

Silanna Uv Technologies Pte Ltd, Singapore, SG;

Inventor:

Petar Atanackovic, Henley Beach South, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/822 (2025.01); H01L 21/20 (2006.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/818 (2025.01); H10H 20/851 (2025.01);
U.S. Cl.
CPC ...
H10H 20/822 (2025.01); H01L 21/2011 (2013.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/818 (2025.01); H10H 20/8513 (2025.01); H10H 20/811 (2025.01);
Abstract

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.


Find Patent Forward Citations

Loading…