The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 22, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Shi-You Liu, Kaohsiung, TW;
Ming-Shiou Hsieh, Chiayi County, TW;
Zih-Hsuan Huang, Tainan, TW;
Tsai-Yu Wen, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate having a P-type device region and an N-type device region, wherein the P-type device region includes germanium dopants. A first gate oxide layer is formed on the P-type device region and a second gate oxide layer is formed on the N-type device region. The first gate oxide layer and the second gate oxide layer are formed through a same oxidation process. The first gate oxide layer includes nitrogen dopants and the second gate oxide layer does not include the nitrogen dopants.