The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Feb. 15, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chern-Yow Hsu, Chu-Bei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a method of forming an integrated chip. The method includes forming a magnetic tunnel junction (MTJ) stack over a bottom electrode layer. A sacrificial dielectric is formed over the MTJ stack. The sacrificial dielectric is patterned to form a cavity. A top electrode material is formed within the cavity and a mask is formed over the top electrode material. The top electrode material extends from directly below the mask to laterally past an outermost sidewall of the mask. The sacrificial dielectric is removed. The MTJ stack is patterned according to the top electrode material and the mask to form an MTJ after removing the sacrificial dielectric. An etchant that is used to pattern the MTJ stack etches the top electrode material with the mask in place.