The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Sep. 23, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Linchun Wu, Hubei, CN;

Cuicui Kong, Hubei, CN;

Zhiliang Xia, Hubei, CN;

Zongliang Huo, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack of conductive layers and insulating layers stacked alternatingly in a first direction. The stack of conductive layers and insulating layers has a first side and a second side in the first direction. The semiconductor device then includes a semiconductor layer at the first side of the stack of conductive layers and insulating layers, and a first isolation structure extending through, in the first direction, the semiconductor layer and a subset of the stack of conductive layers and insulating layers. The subset of the stack of conductive layers and insulating layers includes a first conductive layer. The first isolation structure separates a first portion of the first conductive layer from a second portion of the first conductive layer.


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