The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Jul. 08, 2024
Applicant:

Amkor Technology Singapore Holding Pte. Ltd., Singapore, SG;

Inventors:

Jae Hun Bae, Seoul, KR;

Won Chul Do, Gyeonggi-do, KR;

Min Yoo, Seoul, KR;

Young Rae Kim, Gyeonggi-do, KR;

Min Hwa Chang, Seoul, KR;

Dong Hyun Kim, Jeju-si, KR;

Ah Ra Jo, Gyeonggi-do, KR;

Seok Geun Ahn, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/6835 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 24/19 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 23/538 (2013.01); H01L 23/5385 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.


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