The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
May. 05, 2023
Qualcomm Incorporated, San Diego, CA (US);
Dongming He, San Diego, CA (US);
Jun Chen, San Diego, CA (US);
Yangyang Sun, San Diego, CA (US);
Lily Zhao, San Diego, CA (US);
Ahmer Syed, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
Disclosed are techniques for integrated circuit device. In an aspect, an integrated circuit device includes a metallization structure that includes a top metal layer structure; a passivation layer on the metallization structure; a bump structure disposed on the first bump line structure; and a first polymer protection layer. The passivation layer may include one or more first openings. The first bump line structure may include one or more first extended portions respectively extending toward the top metal layer structure through the one or more first openings. The bump structure may be electrically coupled to the first bump line structure. The first polymer protection layer may be on the passivation layer, on a portion of the first bump line structure, and in contact with a side surface of the first bump line structure.