The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Jul. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/48 (2006.01); H10D 30/67 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H10D 30/67 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor device includes a substrate, a main circuit disposed over a front surface of the substrate, and a backside power delivery circuit disposed over a back surface of the substrate. The backside power delivery circuit includes a first main power supply wiring for supplying a first voltage, a second main power supply wiring for supplying a second voltage, a first local power supply wiring, and a first switch coupled to the first main power supply wiring and the first local power supply wiring. The first main power supply wiring, the second main power supply wiring and the first local power supply wiring are embedded in a first back side insulating layer disposed over the back surface of the substrate. The first local power supply wiring is coupled to the main circuit via a first through-silicon via (TSV) passing through the substrate for supplying the first voltage.


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