The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jan. 04, 2023
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Chengfeng Li, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/02263 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76883 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01);
Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a substrate; and forming a first metal via structure, where the first metal via structure is provided in the substrate, and a top surface of the first metal via structure is flush with a top surface of the substrate, where the top surface of the first metal via structure is made flush with the top surface of the substrate through at least a first process and a second process.