The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Nov. 05, 2021
Applicant:
Globalwafers Co., Ltd, Hsinchu, TW;
Inventors:
Peter Daniel Albrecht, O'Fallon, MO (US);
Junnan Wu, Ipswich, MA (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); C23C 14/48 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); G01N 19/02 (2006.01); H01J 37/20 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); C23C 14/48 (2013.01); C23C 14/505 (2013.01); C23C 14/541 (2013.01); G01N 19/02 (2013.01); H01J 37/20 (2013.01); H01J 37/3171 (2013.01); H01L 21/265 (2013.01); H01L 21/67213 (2013.01); H01L 21/68757 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract
Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline range.