The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Aug. 18, 2022
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Tristan Harper, Newport, GB;
Kathrine Crook, Newport, GB;
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/36 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02167 (2013.01); C23C 16/36 (2013.01); C23C 16/50 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); H01L 21/02274 (2013.01); H01J 37/32091 (2013.01); H01J 37/32816 (2013.01); H01J 2237/3321 (2013.01);
Abstract
According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH), a hydrocarbon gas or vapour, nitrogen gas (N), and hydrogen gas (H) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.