The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Aug. 26, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Shruba Gangopadhyay, San Jose, CA (US);
Bhaskar Jyoti Bhuyan, San Jose, CA (US);
Michael Haverty, Mountain View, CA (US);
Bo Xie, Sunnyvale, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Rui Lu, Santa Clara, CA (US);
Yijun Liu, Sunnyvale, CA (US);
Ruitong Xiong, San Jose, CA (US);
Xiaobo Li, San Jose, CA (US);
Lakmal C. Kalutarage, San Jose, CA (US);
Lauren Bagby, Palo Alto, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.