The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 06, 2022
The Regents of the University of California, Oakland, CA (US);
Merck Patent Gmbh, Darmstadt, DE;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Andrew Kummel, San Diego, CA (US);
Michael Breeden, La Jolla, CA (US);
Victor Wang, Whittier, CA (US);
Ravindra Kanjolia, North Andover, MA (US);
Mansour Moinpour, San Jose, CA (US);
Harsono Simka, Saratoga, CA (US);
The Regents of the University of California, Oakland, CA (US);
Merck Patent GmbH, Darmstadt, DE;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)+OALD, as well as a two-step ALD process using Ru(DMBD)(CO)+TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)+Oto increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.