The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Jul. 28, 2023
Applicant:

Axcelis Technologies, Inc., Beverly, MA (US);

Inventors:

Neil Colvin, Merrimack, NH (US);

David Sporleder, Billerica, MA (US);

Udo H. Verkerk, Toronto, CA;

Atul Gupta, Lexington, MA (US);

Edward Moore, Newmarket, NH (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/48 (2006.01); C23C 14/14 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); C23C 14/14 (2013.01); H01J 37/3171 (2013.01);
Abstract

An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.


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