The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Feb. 21, 2022
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventor:

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/815 (2025.01); H03H 9/02 (2006.01); H03H 9/56 (2006.01); H10H 20/813 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/815 (2025.01); H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/02133 (2013.01); H03H 9/562 (2013.01); H10H 20/813 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
Abstract

Disclosed are a patterned substrate, a semiconductor device and a nanotube structure. The patterned substrate includes, in a vertical direction, a base plate and an AlN layer that are sequentially stacked. The patterned substrate includes, in the vertical direction, a first surface and a second surface that are oppositely arranged, a bottom surface of the base plate is the first surface of the patterned substrate, the second surface of the patterned substrate is a patterned surface, the second surface is provided with a plurality of grooves that are independent of each other in a horizontal direction and are arranged in an array, and at least part of the base plate is left below each of the plurality of grooves. According to the patterned substrate in the present application, a structure of the AlN layer is changed, so that an epitaxial structure grown subsequently is prevented from warping.


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