The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Dec. 06, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Alexander M. Derrickson, Saratoga Springs, NY (US);
Uppili S. Raghunathan, Essex Junction, VT (US);
Vibhor Jain, Williston, VT (US);
Yusheng Bian, Ballston Lake, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 30/24 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 30/245 (2025.01); H10F 71/1212 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.