Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a method are provided. The semiconductor device includes gate structures extending on a substrate along a first direction and arranged in a second direction in parallel with one another, source and drain regions disposed in the substrate between the parallel gate structures, and dielectric structures disposed on the substrate and between the gate structures. The semiconductor device further includes an ILD layer disposed over the gate structures and the dielectric structures, contact structures disposed beside and between the parallel gate structures and separators embedded in the ILD layer. Each contact structure extends vertically through the ILD layer and the dielectric structures, and the separators are disposed above the gate structures and disposed beside the contact structures. Each contact structure extends along the first direction and extends between two adjacent separators, and each separator extending in the second direction overlaps at least two adjacent gate structures.