The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Dec. 30, 2022
Hangzhou Silicon-magic Semiconductor Technology Co., Ltd., Hangzhou, CN;
Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Abstract
Disclosed is a manufacturing method of a trench-type power device. The manufacturing method comprises: forming a drift region; forming a first trench and a second trench in the drift region; forming a gate stack in the first trench; forming a doped region and a well region of P type in the drift region by performing first ion implantation; forming a source region of N type in the well region by performing second ion implantation. The well region in which a dopant concentration gradually decreases with depth is formed by the first ion implantation, an upper part of the well region is inverted by the second ion implantation to form the source region. The doped region and well region can be formed by self-alignment in a common ion implantation step, improving power device performance, reducing numbers of process steps of ion implantation and masks, reducing manufacturing cost.