The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Sep. 08, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Kun-Ju Li, Tainan, TW;

Hsin-Jung Liu, Pingtung County, TW;

Zong-Sian Wu, Tainan, TW;

Wei-Xin Gao, Tainan, TW;

Jhih-Yuan Chen, Kaohsiung, TW;

Ang Chan, Taipei, TW;

Chau-Chung Hou, Tainan, TW;

Hsiang-Chi Chien, Pingtung County, TW;

I-Ming Lai, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H10D 84/0156 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01); H01L 2224/05018 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05176 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05576 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06544 (2013.01);
Abstract

A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.


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