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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12494431 B1

PDFFull Text
Date of Patent:
Dec. 09, 2025

Filed:

Jun. 27, 2022

Power semiconductor device and method of producing a power semiconductor device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Christian Hammer, Lappersdorf, DE;

Matthias Mueller, Regensburg, DE;

Wolfgang Lehnert, Lintach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Marlon T Fletcher

Assistant Examiner:

Samuel Jonathan Smith

Int. Cl.
CPC ...
H01L 23/532 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); C23C 16/45529 (2013.01); C23C 16/4554 (2013.01); H01L 21/0254 (2013.01); H01L 21/76846 (2013.01); H10D 62/8503 (2025.01);
Abstract

A power semiconductor device includes a semiconductor body; a first load terminal at the semiconductor body; and a second load terminal at the semiconductor body. The power semiconductor device is configured to conduct a load current between the first load terminal and the second load terminal. The first load terminal has a first side and a second side adjoining the semiconductor body. The first load terminal includes: at the first side, an atomic layer deposition (ALD) layer; at the second side, a base layer including copper; and between the ALD layer and the base layer, a coupling layer that includes copper-silicon-nitride (CuSiN).

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Quick Actions:

Hammer, Christian. (2025). Power semiconductor device and method of producing a power semiconductor device (U.S. Patent No. 12494431). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12494431

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