The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jun. 22, 2023
Seiko Epson Corporation, Tokyo, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes: forming a first through hole penetrating from a first surface to a second surface of a semiconductor substrate; forming a second insulating film at the first surface of the semiconductor substrate and a side surface of the first through hole; disposing a resist at a surface of the second insulating film from the first surface of the semiconductor substrate to an end portion of the side surface of the first through hole on a first surface side of the semiconductor substrate; wet-etching the second insulating film by using the resist as a mask; covering the first surface of the semiconductor substrate and the side surface of the first through hole with an organic insulating film; and forming a second conductive film at a surface of the organic insulating film.