The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Apr. 17, 2024
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Elie A. Maalouf, Mesa, AZ (US);

Eduard Jan Pabst, Mesa, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/48 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4875 (2013.01); H01L 23/528 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 23/3736 (2013.01); H01L 23/481 (2013.01); H01L 24/81 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6644 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/8112 (2013.01); H01L 2224/81815 (2013.01); H03F 1/0288 (2013.01); H03F 1/301 (2013.01); H03F 3/21 (2013.01); H03F 2200/451 (2013.01);
Abstract

A power amplifier module includes a module substrate, a power transistor die, and a heat spreader. The module substrate has first, second, and third module pads exposed at a mounting surface. The power transistor die has an input/output surface that faces the mounting surface, an opposed ground surface, an input pad electrically coupled to the first module pad, an output pad electrically coupled to the second module pad, and an integrated power transistor. In an embodiment, the power transistor is a field effect transistor with a gate terminal coupled to the input pad, a drain terminal coupled to the output pad, and a source terminal coupled to the ground surface. The heat spreader has a thermal contact surface that is physically and electrically coupled to the ground surface of the power transistor die. An electrical ground contact structure is connected between the thermal contact surface and the third module pad.


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