The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Sep. 06, 2022
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Liang Ju Wei, Chiayi, TW;

Chung-Yi Chiu, Tainan, TW;

Zhen Wu, Kaohsiung, TW;

Hsuan-Hsu Chen, Tainan, TW;

Chun-Lung Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01J 37/32926 (2013.01); H01J 2237/334 (2013.01);
Abstract

A control method of a multi-stage etching process and a processing device using the same are provided. The control method of the multi-stage etching process includes the following step S. A stack information of a plurality of hard mask layers is set. An etching target condition is set. Through a machine learning model, a parameter setting recipe of the hard mask layers is generated under the etching target condition. The machine learning model is trained based on the stack information of the hard mask layers, a plurality of process parameters and a process result.


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