The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Mar. 18, 2022
Tokyo Electron Limited, Tokyo, JP;
Kandabara N. Tapily, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Method for gas phase atomic layer deposition (ALD) of aluminum oxide films on patterned substrates using a waterless oxidizer that includes an aluminum alkoxide gas. The method includes providing a substrate containing a dielectric layer and a metal layer or a semiconductor layer, and selectively depositing an aluminum oxide film on a surface of the dielectric layer relative to a surface of the metal layer or a surface of the semiconductor layer by a) exposing the substrate to an aluminum alkyl gas, an aluminum halide gas, or an aluminum hydride gas, and b) exposing the substrate to an aluminum alkoxide gas, where the aluminum alkoxide gas is the principal source of oxygen in the aluminum oxide film.