The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jul. 18, 2023
Sandisk Technologies, Inc., Milpitas, CA (US);
Abhijith Prakash, Milpitas, CA (US);
Xiang Yang, Santa Clara, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
The memory device includes a quick pass write (QPW) voltage source and a transistor that can control the supply of a first QPW bias voltage to a plurality of bit lines. Control circuitry programs the memory cells of a selected word line in a plurality of program loops. For each memory cell in the selected word line, the control circuitry determines if the memory cell is within either a first or a second QPW zone. If the memory cell is in the second QPW zone, the control circuitry connects the QPW voltage source to the bit line that is in communication with that memory cell to supply the first QPW bias voltage to the bit line. In response to a determination that the memory cell is in the first QPW zone, the control circuitry controls the transistor to supply an average second QPW bias voltage to the bit line.