The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Jan. 03, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Daniele Vimercati, El Dorado Hills, CA (US);

Eric Carman, San Francisco, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 5/06 (2006.01); G11C 5/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 5/063 (2013.01); G11C 5/10 (2013.01); G11C 11/2273 (2013.01);
Abstract

Techniques and configurations for electronic memory are described. An apparatus may include a first set of memory cells coupled with a first plate line and a word line, where a memory cell in the first set of memory cells may be coupled with a first bit line, and a second set of memory cells coupled with a second plate line and the word line, where a memory cell of the second set of memory cells may be coupled with a second bit line. The apparatus may also include a sense component having a first node coupled with the first bit line and a first capacitor and a second node coupled with the second bit line and a second capacitor. Also, a set of capacitors may be coupled with both nodes. The capacitors may support adjustment of the voltage of the nodes of the sense component.


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