The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Aug. 23, 2022
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
The application discloses a method for manufacturing a photomask, firstly determining a main pattern area of a photomask substrate and an auxiliary pattern area around the main pattern area; performing optical intensity simulation on patterns of the main pattern area and the auxiliary pattern area by means of an optical proximity correction (OPC) model, so as to ensure that the pattern of the auxiliary pattern area is not exposed on a photoresist on a wafer and the pattern of the main pattern area is exposed on the photoresist on the wafer during the integrated circuit manufacturing process; screening out a set of auxiliary pattern parameters; and forming the pattern of the main pattern area on the photomask substrate by means of a photomask manufacturing etching process, and forming the pattern of the auxiliary pattern area on the photomask substrate according to the auxiliary pattern parameters. The application also discloses a photomask.