The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Feb. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company , Ltd., Hsinchu, TW;

Inventors:

Kuang-Wei Cheng, Hsinchu, TW;

Cheng-Lung Wu, Zhunan, TW;

Chyi-Tsong Ni, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4412 (2013.01); C23C 16/401 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02211 (2013.01);
Abstract

Systems and methods for reducing obstructions in an exhaust line of a sub-atmospheric chemical vapor deposition (SACVD) system are disclosed. Such obstruction may occur due to the reaction of a silicon precursor with ozone, which forms solid particles in the exhaust line. A catalytic apparatus is provided which catalyzes the decomposition of ozone (O) to oxygen (O). Due to the lower reactivity of O, the formation of solid particles is reduced.


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