The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Oct. 20, 2022
Panjit International Inc., Kaohsiung, TW;
Yijyun Ke, Zhubei, TW;
Seungchul Lee, San Jose, CA (US);
PANJIT INTERNATIONAL INC., Kaohsiung, TW;
Abstract
A semiconductor device and a manufacturing method of forming the semiconductor device are provided. The semiconductor device includes an active area and a periphery area surrounding the active area, the semiconductor device includes a semiconductor substrate, an epitaxial layer, a field oxide layer, a polysilicon layer, a dielectric layer and a metal contact layer. The semiconductor substrate has a silicon carbide layer. The epitaxial layer is disposed on the semiconductor layer and the epitaxial layer has a doped layer. The polysilicon layer is disposed on the field oxide layer. The polysilicon layer at the periphery area has a plurality of P-plus regions and a plurality of N-plus regions and the plurality of P-plus regions and the plurality of N-plus regions are alternatively arranged to form a zener diode.