The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Aug. 12, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Meng-Han Lin, Hsinchu, TW;
Te-An Chen, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/28 (2006.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H01L 21/28052 (2013.01); H10D 64/017 (2025.01); H10D 64/518 (2025.01); H10D 64/663 (2025.01); H10D 84/0177 (2025.01); H10D 84/0179 (2025.01); H10D 84/038 (2025.01); H10D 84/83135 (2025.01); H10D 84/83138 (2025.01); H10D 84/8314 (2025.01);
Abstract
A semiconductor device includes a substrate, a metal gate and a poly gate. The substrate includes a first region and a second region. The metal gate is disposed on the first region of the substrate. The poly gate is disposed on the second region of the substrate. A gate area of the poly gate is greater than that of the metal gate.
Lin, Meng-Han. (2025). Semiconductor device and method of forming the same (U.S. Patent No. 12490510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12490510
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile