The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first nanostructure stack and a second nanostructure stack over the first fin and the second fin respectively. The method includes forming an isolation layer over the base. The method includes forming an isolation structure between the first fin and the second fin and between the first nanostructure stack and the second nanostructure stack. The isolation structure has an air gap. The method includes partially removing the isolation layer. The method includes forming a gate stack over the first nanostructure stack, the second nanostructure stack, the isolation structure, and the isolation layer.