The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jul. 13, 2021
Air Water Inc., Osaka, JP;
Sumito Ouchi, Azumino, JP;
Keisuke Kawamura, Azumino, JP;
Air Water Inc., Osaka, JP;
Abstract
A compound semiconductor substrate and a method for manufacturing the compound semiconductor substrate including the steps of forming an electronic traveling layer consisting of a first nitride semiconductor, forming a barrier layer consisting of a second nitride semiconductor with a wider band gap than a band gap of the first nitride semiconductor on the electronic traveling layer, and forming a cap layer with an organometallic vapor phase epitaxy on the barrier layer and in contact with the barrier layer. The cap layer has a C concentration ofatoms/cmor more andatoms/cmor less, and consists of a nitride semiconductor. During the step forming the cap layer, source gas of the nitride semiconductor forming the cap layer and hydrocarbon gas are introduced to a top surface of the barrier layer.