The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Jun. 12, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Yao Lin, New Taipei, TW;

Hsiao Wen Lee, Hsinchu, TW;

Chao-Cheng Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/116 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01);
Abstract

A semiconductor device includes a plurality of channel layers vertically spaced from one another, a gate structure wrapping around each of the plurality of channel layers; and an inner spacer that is disposed along sidewalls of a lower portion of the gate structure. The inner spacer curves toward the lower portion of the gate structure.


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