The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Mar. 06, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Hsiao-Chun Chang, Hukou Township, TW;
Guan-Jie Shen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H10D 30/01 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/324 (2013.01); H10D 30/024 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 62/292 (2025.01); H10D 62/314 (2025.01); H10D 64/017 (2025.01);
Abstract
In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure covered by the cover layer, and a source/drain epitaxial layer is formed in a source/drain region of the upper fin structure. The thermal operation changes a germanium distribution in the upper fin structure.