The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Oct. 17, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minkyung Kang, Seoul, KR;
Suhyeong Lee, Hwaseong-si, KR;
Seohee Park, Daejeon, KR;
Gukhyon Yon, Yongin-si, KR;
Yongsuk Tak, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Provided is a method of manufacturing a semiconductor device, the method including: forming a mold structure comprising insulation layers and sacrificial layers alternately and repeatedly stacked on a substrate; forming a channel hole extending through the mold structure; forming a blocking layer in the channel hole; forming a charge storage layer on the blocking layer; forming a tunnel insulation layer including a doping element on the charge storage layer; performing heat treatment to diffuse the doping element from the tunnel insulation layer to the charge storage layer; and forming a channel layer on the tunnel insulation layer.